T
T
T
S
S
S
6
6
6
4
4
4
M
M
M
D
D
D
R
R
R
7
7
7
2
2
2
V
V
V
6
6
6
L
L
L
5
5
5
184Pin DDR266 Registered DIMM
512MB with 64Mx4 CL2.5
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD supply to Vss VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55~+150
°C
Power dissipation PD 18 W
Short circuit current IOS 50 mA
Mean time between failure MTBF 50 year
Temperature Humidity Burning THB
85°C/85%, Static Stress °C-%
Temperature Cycling Test TC
0°C ~ 125°C Cycling °C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C)
Parameter Symbol Min Max Unit Note
Supply voltage VDD 2.3 2.7 V
I/O Supply voltage VDDQ 2.3 2.7 V
I/O Reference voltage VREF VDDQ/2-50mV VDDQ/2+50mV V 1
I/O Termination voltage VTT VREF-0.04 VREF+0.04 V 2
Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V 4
Input logic low voltage VIL(DC) -0.3 VREF-0.15 V 4
Input Voltage Level, CK and /CK inputs VIN(DC) -0.3 VDDQ+0.3 V
Input Differential Voltage, CK and /CK inputs VID(DC) 0.3 VDDQ+0.6 V 3
Input crossing point voltage, CK and /CK inputs VIX(DC) 1.15 1.35 V 5
Input leakage current II -2 2 uA
Output leakage current IOZ -5 5 uA
Output High Current (Normal strength driver)
VOUT= VTT + 0.84V
IOH -16.8 mA
Output Low Current (Normal strength driver)
VOUT= VTT – 0.84V
IOL 16.8 mA
Output High Current (Half strength driver)
VOUT= VTT + 0.45V
IOH -9 mA
Output High Current (Half strength driver)
VOUT= VTT - 0.45V
IOL 9 mA
Note: 1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and
DC offset on VREF, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on
VREF and internal DRAM noise coupled. TO VREF, both of which may result in VREF noise. VREF should be
de-coupled with an inductance of <=3nH.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to
be set equal to VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or
the pad in simulation. The AC and DC input specifications are relative to a VREF envelop that has been
bandwidth limited to 200MHZ.
5. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc
level of the same.
Transcend Information Inc.
5
(11 pages)
Manymanuals.com
Manymanuals.de
Manymanuals.fr
Manymanuals.it
Manymanuals.pl
Manymanuals.cz
Manymanuals.es
Manymanuals-pt.com
Comments to this Manuals