Transcend TS32MLS72V6D Datasheet download pdf (Page 5)

168PIN PC133 Unbuffered DIMM

256MB With 16Mx8 CL3

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value

Unit Note

Supply voltage

Parameter Symbol Min Max

Unit

Voltage on any pin relative to Vss

VDD 3.0 3.3

Unit

Address (A0 ~A11, BA0 ~BA1)

VIN, VOUT -1.0~4.6 V

3.6 V

/RAS, /CAS, /WE

CKE (CKE0 ~ CKE1)

Clock (CLK0 ~ CLK3)

Voltage on VDD supply to Vss VDD, VDDQ -1.0~4.6

Input high voltage VIH 2.0

/CS (/CS0 ~ /CS3)

DQM (DQM0 ~ DQM7)

DQ (DQ0 ~ DQ63)

CB (CB0 ~ CB7)

Storage temperature

3.0 VDD+0.3 V

ADD

CKE

TSTG -55~+150 °C

Input low voltage

CLK

DQM

Power dissipation PD 18

VIL -0.3 0 0.8

OUT1

COUT2

Short circuit current IOS 50

Output high voltage VOH

Mean time between failure MTBF

2.4 - - V

50 year

Temperature Humidity Burning

IOH=-2mA

Output low voltage VOL

THB 85°C/85%, Static Stress °C-%

- - 0.4

Temperature Cycling Test TC

V IOL=2mA

0°C ~ 125°C Cycling °C

Note:

Input leakage current I

-10 -

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

10 uA 3

DC CHARACTERISTICS

Functional operation should be restricted to recommended operating condition.

Note:

1. VIH (max) = 5.6V AC .The overshoot voltage duration is ≤ 3ns.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

2. VIL (min) = -2.0V AC .The undershoot voltage duration is ≤ 3ns.

Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C)

Parameter Symbol

3. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

Min Typ Max

CAPACITANCE

(VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV)

V 2

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Transcend TS32MLS72V6D Datasheet Page 5

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