Transcend TS32MLS72V6D Datasheet Page 10

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T
T
T
S
S
S
3
3
3
2
2
2
M
M
M
L
L
L
S
S
S
7
7
7
2
2
2
V
V
V
6
6
6
D
D
D
168PIN PC133 Unbuffered DIMM
256MB With 16Mx8 CL3
Serial Presence Detect Specification
Serial Presence Detect
11 DIMM configuration type ECC
A0
24
Superset Information - 00
Byte No. Function Described Standard Specification
02
12 Refresh Rate Type
SDRAM Access Time from Clock @CAS Latency of 2 6ns 60
Vendor Part
0 Number of Bytes Written into Serial Memory
15.625us/Self Refresh 80
25 SDRAM Cycle Time @CAS Latency of 1 -
128bytes 80
13 Primary SDRAM Width X8
00
26
1 Total # of Bytes of S.P.D Memory 256bytes
08
14
SDRAM Access Time from Clock @CAS Latency of 1 - 00
08
2 Fundamental Memory Type
Error Checking SDRAM Width X8 08
27 Minimum Row Precharge Time (=t RP) 20ns
SDRAM 04
15 Min Clock Delay for Back to Back Random Address tCCD=1CLK
14
28
3 Number of Row Addresses on this Assembly 12
01
16
Minimum Row Active to Row Activate (=t RRD) 15ns 0F
0C
4 Number of Column Addresses on this Assembly
SDRAM Device Attributes: Burst Lengths Supported 1,2,4,8 & Full page 8F
29 Minimum RAS to CAS Delay (=t RCD) 20ns
10 0A
17 SDRAM Device Attributes: # of banks on SDRAM device 4 bank
14
30
5 Number of Module Rows on this Assembly 2 rows
04
18
Minimum Activate Precharge Time (=t RAS) 45ns 2D
02
6 Data Width of this Assembly
SDRAM Device Attributes: CAS Latency 2,3 06
31 Module Row Density 2 rows of 128MB
72bits 48
19 SDRAM Device Attributes: CS Latency 0 clock
20
32
7 Data Width of this Assembly -
01
20
Command and Address Signal input Setup Time 1.5ns 15
00
8 Voltage Interface Standard of this Assembly LVTTL 01
SDRAM Device Attributes: Write Latency 0 clock 01
21 SDRAM Module Attributes
Non-buffered,
non-registered &
redundant addressing
00
33 Command and Address Signal input Hold Time 0.8ns 08
34 Data Signal Setup Time 1.5ns 15
9 SDRAM Cycle Time @CAS latency of 3 7.5ns
22
75
10 SDRAM Access Time from Clock @CAS latency of 3
SDRAM Device Attributes: General
+/- 10% voltage
tolerance, Burst Read
Single bit Write
precharge all, auto
precharge
0E
35 Data Signal Hold Time 0.8ns
5.4ns 54
23 SDRAM Cycle Time @CAS Latency of 2 10ns
08
36-61
Transcend Information Inc.
10
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